By Cher Ming Tan, Wei Li, Zhenghao Gan, Yuejin Hou
Applications of Finite aspect tools for Reliability stories on ULSI Interconnections offers a close description of the appliance of finite aspect tools (FEMs) to the learn of ULSI interconnect reliability. during the last 20 years the applying of FEMs has turn into common and maintains to guide to a stronger figuring out of reliability physics.
To aid readers take care of the expanding sophistication of FEMs’ functions to interconnect reliability, Applications of Finite aspect equipment for Reliability experiences on ULSI Interconnections will:
- introduce the main of FEMs;
- review numerical modeling of ULSI interconnect reliability;
- describe the actual mechanism of ULSI interconnect reliability encountered within the electronics undefined; and
- discuss intimately using FEMs to appreciate and enhance ULSI interconnect reliability from either the actual and functional standpoint, incorporating the Monte Carlo method.
A full-scale evaluation of the numerical modeling method utilized in the examine of interconnect reliability highlights invaluable and remarkable strategies which have been constructed lately. Many illustrations are used through the ebook to enhance the reader’s realizing of the technique and its verification. genuine experimental effects and micrographs on ULSI interconnects also are included.
Applications of Finite point tools for Reliability stories on ULSI Interconnections is an effective reference for researchers who're engaged on interconnect reliability modeling, in addition to should you need to know extra approximately FEMs for reliability functions. It offers readers an intensive figuring out of the purposes of FEM to reliability modeling and an appreciation of the strengths and weaknesses of varied numerical versions for interconnect reliability.
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Additional info for Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections
We can see that the interconnects disconnect suddenly after a certain storage time, depending on the storage temperature. Fig. 12 Top view of an interconnection with a slitlike void for the simulation. Reprinted from Aoyagi , copyright Ó 2006, with permission from Elsevier 32 2 Physics-Based Modeling for ULSI Interconnections Failure Mechanisms Fig. 13 Change in the line resistance and void width as a function of storage time for aluminum interconnect with the storage temperature as a parameter.
The nodal values of the field variable and the interpolation functions for the elements completely define the behavior of the field variable within the elements. This procedure will be discussed in detail later in next section. 1 gives a schematic for discretization of the domain of interest into elements/nodes as a 2D example. With appropriate boundary conditions, initial conditions, and loading applied to the nodes/elements, the equations of all the elements are combined together and solved simultaneously to obtain the basic nodal results, such as displacement for structural analysis or temperature for heat transfer problem.
Gleixner RJ, Nix WD (1999) A physically based model of electromigration and stressinduced void formation in microelectronic interconnects. J Appl Phys 86:1932 21. Sukharev V, Zschech E (2004) A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: effect of interface bonding strength. J Appl Phys 96:6337 22. Zschech E, Sukharev V (2005) Microstructure effect on EM-induced copper interconnect degradation: experiment and simulation. Microelectron Eng 82:629 23.