By Noyes W
Content material: Advances in Photochemistry; Contents; hugely complicated Photochemical Mechanisms; The Kinetics and Mechanism of Photochemical Oxidation of Aldehydes by means of Molecular Oxygen; Singlet and Triplet States: Benzene and straightforward fragrant Compounds; Photochemical Rearrangements of Conjugated Cyclic Ketones : the current country of Investigations; Photochemistry of Conjugated Dienes and Trienes; The Reactions of Sulfur Atoms; a few Photochemical alterations of Polyenic Compounds; The Photolysis of the Diazirines; writer Index; topic Index; Cumulative Index
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2Current address: Department of Chemistry, St. Olaf College, Northfield, MN 55057. ; ACS Symposium Series; American Chemical Society: Washington, DC, 1983. 32 MULTICHANNEL IMAGE DETECTORS s o f t w a r e c o n t r o l o f t h e speed o f s i g n a l a c q u i s t i o n , s p e c t r a l r e s o l u t i o n , photometric accuracy, exposure time, s p a t i a l r e s o l u t i o n , and t e m p o r a l r e s o l u t i o n . C o m p l e t e c o m m e r c i a l s y s t e m s i n c l u d i n g an S I T v i d i c o n d e t e c t o r , d e t e c t o r c o n t r o l l e r , h i g h v o l t a g e p u i s e r f o r t i m e g a t i n g , and a c o m p u t e r , i n c l u d i n g s o f t w a r e , a r e a v a i l a b l e .
ACS Symposium Series; American Chemical Society: Washington, DC, 1983. IMAGE SECTION HIGH VELOCITY PHOTOELECTRON BEAM IMAGED ON TARGET ANOOE SCANNING SECTION ^SILICON TARGET LOW VELOCITY I SCANNING BEAM FIELD MESH GUN FOCUSING GRID (#4) GRID (#3) CONTROL GRIO (#1) ELECTRON GUN CATHODE ACCELERATING GRID (#2) Figure 1. Illustration of the silicon-intensified target (SIT) vidicon. (Reproduced with permission from Ref. 8. ) FIBER OPTIC FACEPLATE LIGHT IMAGE FOCUS GRIDS-, PHOTOCATHODE 34 MULTICHANNEL IMAGE DETECTORS t h e amount o f c a p a c i t o r r e c h a r g i n g n e c e s s a r y t o r e a t t a i n t h e e q u i l i b r i u m p o t e n t i a l , and t h e c a p a c i t o r s a r e d i s c h a r g e d i n p r o p o r t i o n t o t h e number o f p h o t o e l e c t r o n s , t h e r e c h a r g i n g c u r r e n t i s p r o p o r t i o n a l t o t h e i n c i d e n t l i g h t i n t e n s i t y .
SPD. When high q u a l i t y devices are used, readout l a g of SPDs i s very s m a l l f o r l i g h t l e v e l s below the capacitance s a t u r a t i o n of the d i o d e s , i . e . , a p p r o x i m a t e l y 2 χ 10 photons/diode. Above t h a t l i g h t l e v e l , c h a r g e d i f f u s e s t o the s u b s t r a t e and a few a r r a y scans may be n e c e s s a r y t o f u l l y r e a d i t o f f the t a r g e t . I t i s i n t e r e s t i n g t o n o t e t h a t the v i d i c o n l a g i s due to incomplete readout of s m a l l s i g n a l s , whereas the reverse i s true f o r SPDs.